Cargando…
Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects ar...
Autores principales: | Ceponis, Tomas, Badokas, Kazimieras, Deveikis, Laimonas, Pavlov, Jevgenij, Rumbauskas, Vytautas, Kovalevskij, Vitalij, Stanionyte, Sandra, Tamulaitis, Gintautas, Gaubas, Eugenijus |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695949/ https://www.ncbi.nlm.nih.gov/pubmed/31375022 http://dx.doi.org/10.3390/s19153388 |
Ejemplares similares
-
Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
por: Ceponis, Tomas, et al.
Publicado: (2020) -
Simulations of Operation Dynamics of Different Type GaN Particle Sensors
por: Gaubas, Eugenijus, et al.
Publicado: (2015) -
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
por: Ceponis, Tomas, et al.
Publicado: (2023) -
Study of Charge Carrier Transport in GaN Sensors
por: Gaubas, Eugenijus, et al.
Publicado: (2016) -
Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes
por: Gaubas, E, et al.
Publicado: (2018)