The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable hig...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Jheng-Jie, Ho, Wen-Jeng, Chen, June-Yan, Lin, Jian-Nan, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu, Chang, Ming-Jui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696431/
https://www.ncbi.nlm.nih.gov/pubmed/31382464
http://dx.doi.org/10.3390/s19153399

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696431/
https://www.ncbi.nlm.nih.gov/pubmed/31382464
http://dx.doi.org/10.3390/s19153399

Ejemplares similares