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The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable hig...

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Detalles Bibliográficos
Autores principales:	Liu, Jheng-Jie, Ho, Wen-Jeng, Chen, June-Yan, Lin, Jian-Nan, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu, Chang, Ming-Jui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696431/ https://www.ncbi.nlm.nih.gov/pubmed/31382464 http://dx.doi.org/10.3390/s19153399

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