Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs...

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Detalles Bibliográficos
Autores principales: Liu, Shuangtao, Yang, Jing, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Liang, Feng, Chen, Ping, Liu, Zongshun, Xing, Yao, Peng, Liyuan, Zhang, Liqun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6702591/
https://www.ncbi.nlm.nih.gov/pubmed/31420760
http://dx.doi.org/10.1186/s11671-019-3095-7
Descripción
Sumario:A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H(2) at the lower temperature period in the two-step cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly.

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