Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs...

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Autores principales: Liu, Shuangtao, Yang, Jing, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Liang, Feng, Chen, Ping, Liu, Zongshun, Xing, Yao, Peng, Liyuan, Zhang, Liqun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6702591/
https://www.ncbi.nlm.nih.gov/pubmed/31420760
http://dx.doi.org/10.1186/s11671-019-3095-7
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author Liu, Shuangtao
Yang, Jing
Zhao, Degang
Jiang, Desheng
Zhu, Jianjun
Liang, Feng
Chen, Ping
Liu, Zongshun
Xing, Yao
Peng, Liyuan
Zhang, Liqun
author_facet Liu, Shuangtao
Yang, Jing
Zhao, Degang
Jiang, Desheng
Zhu, Jianjun
Liang, Feng
Chen, Ping
Liu, Zongshun
Xing, Yao
Peng, Liyuan
Zhang, Liqun
author_sort Liu, Shuangtao
collection PubMed
description A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H(2) at the lower temperature period in the two-step cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly.
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spelling pubmed-67025912019-09-02 Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process Liu, Shuangtao Yang, Jing Zhao, Degang Jiang, Desheng Zhu, Jianjun Liang, Feng Chen, Ping Liu, Zongshun Xing, Yao Peng, Liyuan Zhang, Liqun Nanoscale Res Lett Nano Express A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H(2) at the lower temperature period in the two-step cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly. Springer US 2019-08-16 /pmc/articles/PMC6702591/ /pubmed/31420760 http://dx.doi.org/10.1186/s11671-019-3095-7 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Liu, Shuangtao
Yang, Jing
Zhao, Degang
Jiang, Desheng
Zhu, Jianjun
Liang, Feng
Chen, Ping
Liu, Zongshun
Xing, Yao
Peng, Liyuan
Zhang, Liqun
Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title_full Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title_fullStr Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title_full_unstemmed Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title_short Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
title_sort uniform-sized indium quantum dots grown on the surface of an ingan epitaxial layer by a two-step cooling process
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6702591/
https://www.ncbi.nlm.nih.gov/pubmed/31420760
http://dx.doi.org/10.1186/s11671-019-3095-7
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