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Efficiency Enhancement with the Ferroelectric Coupling Effect Using P(VDF‐TrFE) in CH(3)NH(3)PbI(3) Solar Cells

A novel ferroelectric coupling photovoltaic effect is reported to enhance the open‐circuit voltage (V (OC)) and the efficiency of CH(3)NH(3)PbI(3) perovskite solar cells. A theoretical analysis demonstrates that this ferroelectric coupling effect can effectively promote charge extraction as well as...

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Detalles Bibliográficos
Autores principales: Jia, Endong, Wei, Dong, Cui, Peng, Ji, Jun, Huang, Hao, Jiang, Haoran, Dou, Shangyi, Li, Meicheng, Zhou, Chunlan, Wang, Wenjing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6702631/
https://www.ncbi.nlm.nih.gov/pubmed/31453058
http://dx.doi.org/10.1002/advs.201900252
Descripción
Sumario:A novel ferroelectric coupling photovoltaic effect is reported to enhance the open‐circuit voltage (V (OC)) and the efficiency of CH(3)NH(3)PbI(3) perovskite solar cells. A theoretical analysis demonstrates that this ferroelectric coupling effect can effectively promote charge extraction as well as suppress combination loss for an increased minority carrier lifetime. In this study, a ferroelectric polymer P(VDF‐TrFE) is introduced to the absorber layer in solar cells with a proper cocrystalline process. Piezoresponse force microscopy (PFM) is used to confirm that the P(VDF‐TrFE):CH(3)NH(3)PbI(3) mixed thin films possess ferroelectricity, while the pure CH(3)NH(3)PbI(3) films have no obvious PFM response. Additionally, with the applied external bias voltages on the ferroelectric films, the devices begin to show tunable photovoltaic performance, as expected for the polarization in the poling process. Furthermore, it is shown that through the ferroelectric coupled effect, the efficiency of the CH(3)NH(3)PbI(3)‐based perovskite photovoltaic devices is enhanced by about 30%, from 13.4% to 17.3%. And the open‐circuit voltages (V (OC)) reach 1.17 from 1.08 V, which is reported to be among the highest V (OC)s for CH(3)NH(3)PbI(3)‐based devices. It should be noted in particular that the thickness of the layer is less than 160 nm, which can be regarded as semi‐transparent.