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High temperature AlInP X-ray spectrometers
Two custom-made Al(0.52)In(0.48)P p(+)-i-n(+) mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tole...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6704186/ https://www.ncbi.nlm.nih.gov/pubmed/31434964 http://dx.doi.org/10.1038/s41598-019-48394-9 |