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Metal-insulator transition in a semiconductor nanocrystal network

Many envisioned applications of semiconductor nanocrystals (NCs), such as thermoelectric generators and transparent conductors, require metallic (nonactivated) charge transport across an NC network. Although encouraging signs of metallic or near-metallic transport have been reported, a thorough demo...

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Detalles Bibliográficos
Autores principales: Greenberg, Benjamin L., Robinson, Zachary L., Ayino, Yilikal, Held, Jacob T., Peterson, Timothy A., Mkhoyan, K. Andre, Pribiag, Vlad S., Aydil, Eray S., Kortshagen, Uwe R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6707780/
https://www.ncbi.nlm.nih.gov/pubmed/31467972
http://dx.doi.org/10.1126/sciadv.aaw1462
Descripción
Sumario:Many envisioned applications of semiconductor nanocrystals (NCs), such as thermoelectric generators and transparent conductors, require metallic (nonactivated) charge transport across an NC network. Although encouraging signs of metallic or near-metallic transport have been reported, a thorough demonstration of nonzero conductivity, σ, in the 0 K limit has been elusive. Here, we examine the temperature dependence of σ of ZnO NC networks. Attaining both higher σ and lower temperature than in previous studies of ZnO NCs (T as low as 50 mK), we observe a clear transition from the variable-range hopping regime to the metallic regime. The critical point of the transition is distinctly marked by an unusual power law close to σ ∝ T(1/5). We analyze the critical conductivity data within a quantum critical scaling framework and estimate the metal-insulator transition (MIT) criterion in terms of the free electron density, n, and interparticle contact radius, ρ.