Cargando…

Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices

High refractive index (RI) thin films are capable of pulling waveguide mode profiles towards themselves. In this study, it is shown that by applying high RI coatings with specific thicknesses on the side of optical waveguides, significantly different mode profiles for orthogonal polarizations can be...

Descripción completa

Detalles Bibliográficos
Autores principales: Nikbakht, Hamed, Latifi, Hamid, Parsanasab, Gholam-Mohammad, Taghavi, Majid, Riyahi, Maryam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711980/
https://www.ncbi.nlm.nih.gov/pubmed/31455797
http://dx.doi.org/10.1038/s41598-019-48890-y
_version_ 1783446595107291136
author Nikbakht, Hamed
Latifi, Hamid
Parsanasab, Gholam-Mohammad
Taghavi, Majid
Riyahi, Maryam
author_facet Nikbakht, Hamed
Latifi, Hamid
Parsanasab, Gholam-Mohammad
Taghavi, Majid
Riyahi, Maryam
author_sort Nikbakht, Hamed
collection PubMed
description High refractive index (RI) thin films are capable of pulling waveguide mode profiles towards themselves. In this study, it is shown that by applying high RI coatings with specific thicknesses on the side of optical waveguides, significantly different mode profiles for orthogonal polarizations can be achieved. This phenomenon, that we call it polarization-selective mode shaping, can be extensively used in the enhancement of polarization-dependent integrated optical devices. As an illustrating application, a tri-layer structure consisting of poly(methyl methacrylate)/graphene/chalcogenide on a side-polished fiber is designed to realize an extremely high extinction ratio polarizer. This structure changes the mode profiles in a way that the attenuation of TE mode is maximized, while the power carried by the TM mode remains relatively constant. Simulations and experimental characterizations confirm that polarization-selective mode shaping coordinates four loss mechanisms to maximize the extinction ratio and minimize the insertion loss of the polarizer. The fabricated polarizer is examined in the O, C, and L telecommunication frequency bands. This configuration achieves the high extinction ratio of 51.3 dB and its maximum insertion loss in the tested wavelengths is 1.79 dB. The proposed polarizer has been compared with other state-of-the-art polarizers in the conclusion section which shows its superiority.
format Online
Article
Text
id pubmed-6711980
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-67119802019-09-13 Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices Nikbakht, Hamed Latifi, Hamid Parsanasab, Gholam-Mohammad Taghavi, Majid Riyahi, Maryam Sci Rep Article High refractive index (RI) thin films are capable of pulling waveguide mode profiles towards themselves. In this study, it is shown that by applying high RI coatings with specific thicknesses on the side of optical waveguides, significantly different mode profiles for orthogonal polarizations can be achieved. This phenomenon, that we call it polarization-selective mode shaping, can be extensively used in the enhancement of polarization-dependent integrated optical devices. As an illustrating application, a tri-layer structure consisting of poly(methyl methacrylate)/graphene/chalcogenide on a side-polished fiber is designed to realize an extremely high extinction ratio polarizer. This structure changes the mode profiles in a way that the attenuation of TE mode is maximized, while the power carried by the TM mode remains relatively constant. Simulations and experimental characterizations confirm that polarization-selective mode shaping coordinates four loss mechanisms to maximize the extinction ratio and minimize the insertion loss of the polarizer. The fabricated polarizer is examined in the O, C, and L telecommunication frequency bands. This configuration achieves the high extinction ratio of 51.3 dB and its maximum insertion loss in the tested wavelengths is 1.79 dB. The proposed polarizer has been compared with other state-of-the-art polarizers in the conclusion section which shows its superiority. Nature Publishing Group UK 2019-08-27 /pmc/articles/PMC6711980/ /pubmed/31455797 http://dx.doi.org/10.1038/s41598-019-48890-y Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Nikbakht, Hamed
Latifi, Hamid
Parsanasab, Gholam-Mohammad
Taghavi, Majid
Riyahi, Maryam
Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title_full Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title_fullStr Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title_full_unstemmed Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title_short Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
title_sort utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711980/
https://www.ncbi.nlm.nih.gov/pubmed/31455797
http://dx.doi.org/10.1038/s41598-019-48890-y
work_keys_str_mv AT nikbakhthamed utilizingpolarizationselectivemodeshapingbychalcogenidethinfilmtoenhancetheperformanceofgraphenebasedintegratedopticaldevices
AT latifihamid utilizingpolarizationselectivemodeshapingbychalcogenidethinfilmtoenhancetheperformanceofgraphenebasedintegratedopticaldevices
AT parsanasabgholammohammad utilizingpolarizationselectivemodeshapingbychalcogenidethinfilmtoenhancetheperformanceofgraphenebasedintegratedopticaldevices
AT taghavimajid utilizingpolarizationselectivemodeshapingbychalcogenidethinfilmtoenhancetheperformanceofgraphenebasedintegratedopticaldevices
AT riyahimaryam utilizingpolarizationselectivemodeshapingbychalcogenidethinfilmtoenhancetheperformanceofgraphenebasedintegratedopticaldevices