Cargando…

Extremely Large Non-equilibrium Tunnel Magnetoresistance Ratio in CoRhMnGe Based Magnetic Tunnel Junction by Interface Modification

Equiatomic quaternary Heusler compounds (EQHCs) generally have the advantages of high Curie temperature, large spin polarization and long spin diffusion length, and they are regarded as one of the most promising candidates for spintronics devices. Herein, we report a theoretical investigation on an...

Descripción completa

Detalles Bibliográficos
Autores principales:	Feng, Yu, Cheng, Zhenxiang, Wang, Xiaotian
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Frontiers Media S.A. 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6718457/ https://www.ncbi.nlm.nih.gov/pubmed/31508406 http://dx.doi.org/10.3389/fchem.2019.00550

Ejemplares similares

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
por: Loong, Li Ming, et al.
Publicado: (2014)

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction
por: Chen, Xianzhe, et al.
Publicado: (2023)

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles
por: Useinov, Arthur, et al.
Publicado: (2015)

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers
por: Zhou, Bowei, et al.
Publicado: (2023)

Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction
por: Lee, Du-Yeong, et al.
Publicado: (2016)

Electrically programmable magnetoresistance in [Formula: see text] -based magnetic tunnel junctions
por: Hong, Jhen-Yong, et al.
Publicado: (2021)

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
por: Wang, Mengxing, et al.
Publicado: (2018)

Tunneling Magnetoresistance Transition and Highly Sensitive Pressure Sensors Based on Magnetic Tunnel Junctions with a Black Phosphorus Barrier
por: Fang, Henan, et al.
Publicado: (2022)

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers
por: Wang, K., et al.
Publicado: (2015)

Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque
por: Useinov, Arthur, et al.
Publicado: (2017)

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
por: Chen, Aitian, et al.
Publicado: (2019)

Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory
por: Sin, Stanislav, et al.
Publicado: (2022)

Publisher Correction: Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque
por: Useinov, Arthur, et al.
Publicado: (2018)

CrO(2)-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance
por: Han, Jiangchao, et al.
Publicado: (2019)

Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors
por: Tavassolizadeh, Ali, et al.
Publicado: (2016)

Magnetic Noise Prediction and Evaluation in Tunneling Magnetoresistance Sensors
por: Chęciński, Jakub, et al.
Publicado: (2018)

Tunneling anisotropic magnetoresistance driven by magnetic phase transition
por: Chen, X. Z., et al.
Publicado: (2017)

The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing
por: Kim, Geunwoo, et al.
Publicado: (2023)

Superconducting tunnel junctions as detectors for extreme ultraviolet astronomy
por: Peacock, A, et al.
Publicado: (1997)

Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors
por: Wiśniowski, Piotr, et al.
Publicado: (2021)

Tunneling Magnetoresistance DC Current Transformer for Ion Beam Diagnostics
por: Azab, Eman, et al.
Publicado: (2021)

Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr(2)C(2)F(2)
por: Cui, Zhou, et al.
Publicado: (2022)

Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance
por: Chen, Zongbin, et al.
Publicado: (2019)

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer
por: Suzuki, K. Z., et al.
Publicado: (2016)

Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
por: Liu, Houfang, et al.
Publicado: (2015)

Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication
por: Kowalska, Ewa, et al.
Publicado: (2019)

Research of Probability-Based Tunneling Magnetoresistive Sensor Static Hysteresis Model
por: Li, Yutao, et al.
Publicado: (2021)

Spin injection and magnetoresistance in MoS(2)-based tunnel junctions using Fe(3)Si Heusler alloy electrodes
por: Rotjanapittayakul, Worasak, et al.
Publicado: (2018)

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co(2)Fe(6)B(2) Free Layer Structure
por: Lee, Du-Yeong, et al.
Publicado: (2016)

Very large tunneling magnetoresistance in layered magnetic semiconductor CrI(3)
por: Wang, Zhe, et al.
Publicado: (2018)

MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co(2)MnSi interlayers
por: Mao, Siwei, et al.
Publicado: (2017)

Magnetic Tunnel Junction Applications
por: Maciel, Nilson, et al.
Publicado: (2019)

Picosecond optospintronic tunnel junctions
por: Wang, Luding, et al.
Publicado: (2022)

Measurement of the tunnel rate in S-I-S' tunnel junctions as function of bias voltage
por: Kraus, H, et al.
Publicado: (1995)

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors
por: Dąbek, Michał, et al.
Publicado: (2016)

Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor
por: García Vidal, Enrique, et al.
Publicado: (2017)

Design of a Micromachined Z-axis Tunneling Magnetoresistive Accelerometer with Electrostatic Force Feedback
por: Yang, Bo, et al.
Publicado: (2019)

Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices
por: Bean, Jonathan J., et al.
Publicado: (2017)

A Novel Micromachined Z-axis Torsional Accelerometer Based on the Tunneling Magnetoresistive Effect
por: Yang, Bo, et al.
Publicado: (2020)

Intergranular Spin Dependent Tunneling Dominated Magnetoresistance in Helimagnetic Manganese Phosphide Thin Films
por: Muchharla, Baleeswaraiah, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_q16m7ukh0germ6io719fu28kt4