Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of the...

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Detalles Bibliográficos
Autores principales: Zhang, Guohe, Lai, Junhua, Su, Yali, Li, Binhong, Li, Bo, Bu, Jianhui, Yang, Cheng-Fu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6720295/
https://www.ncbi.nlm.nih.gov/pubmed/31443215
http://dx.doi.org/10.3390/ma12162601

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6720295/
https://www.ncbi.nlm.nih.gov/pubmed/31443215
http://dx.doi.org/10.3390/ma12162601

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