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Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodet...

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Detalles Bibliográficos
Autores principales:	Lu, Qin, Yu, Li, Liu, Yan, Zhang, Jincheng, Han, Genquan, Hao, Yue
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6720574/ https://www.ncbi.nlm.nih.gov/pubmed/31395796 http://dx.doi.org/10.3390/ma12162532

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