Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to re...

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Detalles Bibliográficos
Autores principales: Bui, Ha Quoc Thang, Velpula, Ravi Teja, Jain, Barsha, Aref, Omar Hamed, Nguyen, Hoang-Duy, Lenka, Trupti Ranjan, Nguyen, Hieu Pham Trung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6723596/
https://www.ncbi.nlm.nih.gov/pubmed/31344846
http://dx.doi.org/10.3390/mi10080492
Descripción
Sumario:We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

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