Sn‐Based Perovskite for Highly Sensitive Photodetectors

Organic–inorganic hybrid perovskites have emerged as promising functional materials for high‐performance photodetectors. However, the toxicity of Pb and the lack of internal gain mechanism in typical perovskites significantly hinder their practical applications. Herein, a low‐voltage and high‐performance photodetector based on a single layer of lead‐free Sn‐based perovskite film is reported. The device shows broadband response from ultraviolet to near‐infrared light with a responsivity up to 10(5) A W(−1) and a high gain at a low operating voltage. The outstanding performance is attributed to the high hole mobility, p‐doping nature, and excellent optoelectronic properties of the Sn‐based perovskite. Moreover, the device is assembled on a flexible substrate and demonstrates both high sensitivity and good bending stability. This work demonstrates a route for realizing nontoxic, low‐cost, and high‐performance perovskite photodetectors with a simple device structure.