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Long valley lifetime of dark excitons in single-layer WSe(2)

Single-layer transition metal dichalcogenides provide a promising material system to explore the electron’s valley degree of freedom as a quantum information carrier. The valley degree of freedom can be directly accessed by means of optical excitation. However, rapid valley relaxation of optically e...

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Detalles Bibliográficos
Autores principales: Tang, Yanhao, Mak, Kin Fai, Shan, Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6731252/
https://www.ncbi.nlm.nih.gov/pubmed/31492874
http://dx.doi.org/10.1038/s41467-019-12129-1
Descripción
Sumario:Single-layer transition metal dichalcogenides provide a promising material system to explore the electron’s valley degree of freedom as a quantum information carrier. The valley degree of freedom can be directly accessed by means of optical excitation. However, rapid valley relaxation of optically excited electron-hole pairs (excitons) through the exchange interaction has been a major roadblock. Theoretically such valley relaxation is suppressed in dark excitons, suggesting a potential route for long valley lifetimes. Here we develop a waveguide-based method to detect time-resolved and energy-resolved dark exciton emission in single-layer WSe(2), which involves spin-forbidden optical transitions with an out-of-plane dipole moment. The valley degree of freedom of dark excitons is accessed through the valley-dependent Zeeman effect under an out-of-plane magnetic field. We find a short valley lifetime for the dark neutral exciton, likely due to the short-range electron-hole exchange, but long valley lifetimes exceeding several nanoseconds for the dark charged excitons.