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Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC
As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomachining reg...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6733952/ https://www.ncbi.nlm.nih.gov/pubmed/31502007 http://dx.doi.org/10.1186/s11671-019-3123-7 |