Transport Properties and Finite Size Effects in β-Ga(2)O(3) Thin Films

Thin films of the wide band gap semiconductor β-Ga(2)O(3) have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities,...

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Detalles Bibliográficos
Autores principales: Ahrling, Robin, Boy, Johannes, Handwerg, Martin, Chiatti, Olivio, Mitdank, Rüdiger, Wagner, Günter, Galazka, Zbigniew, Fischer, Saskia F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6739305/
https://www.ncbi.nlm.nih.gov/pubmed/31511538
http://dx.doi.org/10.1038/s41598-019-49238-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6739305/
https://www.ncbi.nlm.nih.gov/pubmed/31511538
http://dx.doi.org/10.1038/s41598-019-49238-2

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