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Carrier lifetime enhancement in halide perovskite via remote epitaxy

Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynami...

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Autores principales: Jiang, Jie, Sun, Xin, Chen, Xinchun, Wang, Baiwei, Chen, Zhizhong, Hu, Yang, Guo, Yuwei, Zhang, Lifu, Ma, Yuan, Gao, Lei, Zheng, Fengshan, Jin, Lei, Chen, Min, Ma, Zhiwei, Zhou, Yuanyuan, Padture, Nitin P., Beach, Kory, Terrones, Humberto, Shi, Yunfeng, Gall, Daniel, Lu, Toh-Ming, Wertz, Esther, Feng, Jing, Shi, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742762/
https://www.ncbi.nlm.nih.gov/pubmed/31515482
http://dx.doi.org/10.1038/s41467-019-12056-1
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author Jiang, Jie
Sun, Xin
Chen, Xinchun
Wang, Baiwei
Chen, Zhizhong
Hu, Yang
Guo, Yuwei
Zhang, Lifu
Ma, Yuan
Gao, Lei
Zheng, Fengshan
Jin, Lei
Chen, Min
Ma, Zhiwei
Zhou, Yuanyuan
Padture, Nitin P.
Beach, Kory
Terrones, Humberto
Shi, Yunfeng
Gall, Daniel
Lu, Toh-Ming
Wertz, Esther
Feng, Jing
Shi, Jian
author_facet Jiang, Jie
Sun, Xin
Chen, Xinchun
Wang, Baiwei
Chen, Zhizhong
Hu, Yang
Guo, Yuwei
Zhang, Lifu
Ma, Yuan
Gao, Lei
Zheng, Fengshan
Jin, Lei
Chen, Min
Ma, Zhiwei
Zhou, Yuanyuan
Padture, Nitin P.
Beach, Kory
Terrones, Humberto
Shi, Yunfeng
Gall, Daniel
Lu, Toh-Ming
Wertz, Esther
Feng, Jing
Shi, Jian
author_sort Jiang, Jie
collection PubMed
description Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the ‘defects-tolerant’ halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.
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spelling pubmed-67427622019-09-16 Carrier lifetime enhancement in halide perovskite via remote epitaxy Jiang, Jie Sun, Xin Chen, Xinchun Wang, Baiwei Chen, Zhizhong Hu, Yang Guo, Yuwei Zhang, Lifu Ma, Yuan Gao, Lei Zheng, Fengshan Jin, Lei Chen, Min Ma, Zhiwei Zhou, Yuanyuan Padture, Nitin P. Beach, Kory Terrones, Humberto Shi, Yunfeng Gall, Daniel Lu, Toh-Ming Wertz, Esther Feng, Jing Shi, Jian Nat Commun Article Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the ‘defects-tolerant’ halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics. Nature Publishing Group UK 2019-09-12 /pmc/articles/PMC6742762/ /pubmed/31515482 http://dx.doi.org/10.1038/s41467-019-12056-1 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Jiang, Jie
Sun, Xin
Chen, Xinchun
Wang, Baiwei
Chen, Zhizhong
Hu, Yang
Guo, Yuwei
Zhang, Lifu
Ma, Yuan
Gao, Lei
Zheng, Fengshan
Jin, Lei
Chen, Min
Ma, Zhiwei
Zhou, Yuanyuan
Padture, Nitin P.
Beach, Kory
Terrones, Humberto
Shi, Yunfeng
Gall, Daniel
Lu, Toh-Ming
Wertz, Esther
Feng, Jing
Shi, Jian
Carrier lifetime enhancement in halide perovskite via remote epitaxy
title Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_full Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_fullStr Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_full_unstemmed Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_short Carrier lifetime enhancement in halide perovskite via remote epitaxy
title_sort carrier lifetime enhancement in halide perovskite via remote epitaxy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742762/
https://www.ncbi.nlm.nih.gov/pubmed/31515482
http://dx.doi.org/10.1038/s41467-019-12056-1
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