Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction

A series of heavily Fe-doped LiNbO(3) (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO(3) crystal reached 3.30 × 10(−8) Ω(−1) cm(−1) and 1.46 × 10(−7) Ω(−1) cm(−1) at 473 nm, which are about 7 and 5 orders of magnitude higher tha...

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Autores principales: Li, Wencan, Cui, Jiao, Zheng, Dahuai, Wang, Weiwei, Wang, Shuolin, Song, Shaoqing, Liu, Hongde, Kong, Yongfa, Xu, Jingjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747580/
https://www.ncbi.nlm.nih.gov/pubmed/31438556
http://dx.doi.org/10.3390/ma12172659
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author Li, Wencan
Cui, Jiao
Zheng, Dahuai
Wang, Weiwei
Wang, Shuolin
Song, Shaoqing
Liu, Hongde
Kong, Yongfa
Xu, Jingjun
author_facet Li, Wencan
Cui, Jiao
Zheng, Dahuai
Wang, Weiwei
Wang, Shuolin
Song, Shaoqing
Liu, Hongde
Kong, Yongfa
Xu, Jingjun
author_sort Li, Wencan
collection PubMed
description A series of heavily Fe-doped LiNbO(3) (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO(3) crystal reached 3.30 × 10(−8) Ω(−1) cm(−1) and 1.46 × 10(−7) Ω(−1) cm(−1) at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO(3), respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO(3) on a p-type Si substrate using the pulsed laser deposition. The current–voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.
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spelling pubmed-67475802019-09-27 Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction Li, Wencan Cui, Jiao Zheng, Dahuai Wang, Weiwei Wang, Shuolin Song, Shaoqing Liu, Hongde Kong, Yongfa Xu, Jingjun Materials (Basel) Article A series of heavily Fe-doped LiNbO(3) (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO(3) crystal reached 3.30 × 10(−8) Ω(−1) cm(−1) and 1.46 × 10(−7) Ω(−1) cm(−1) at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO(3), respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO(3) on a p-type Si substrate using the pulsed laser deposition. The current–voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics. MDPI 2019-08-21 /pmc/articles/PMC6747580/ /pubmed/31438556 http://dx.doi.org/10.3390/ma12172659 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Wencan
Cui, Jiao
Zheng, Dahuai
Wang, Weiwei
Wang, Shuolin
Song, Shaoqing
Liu, Hongde
Kong, Yongfa
Xu, Jingjun
Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title_full Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title_fullStr Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title_full_unstemmed Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title_short Fabrication and Characteristics of Heavily Fe-Doped LiNbO(3)/Si Heterojunction
title_sort fabrication and characteristics of heavily fe-doped linbo(3)/si heterojunction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747580/
https://www.ncbi.nlm.nih.gov/pubmed/31438556
http://dx.doi.org/10.3390/ma12172659
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