Radiation Response of Negative Gate Biased SiC MOSFETs

Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is of interest, in t...

Descripción completa

Detalles Bibliográficos
Autores principales: Takeyama, Akinori, Makino, Takahiro, Okubo, Shuichi, Tanaka, Yuki, Yoshie, Toru, Hijikata, Yasuto, Ohshima, Takeshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747762/
https://www.ncbi.nlm.nih.gov/pubmed/31461860
http://dx.doi.org/10.3390/ma12172741

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747762/
https://www.ncbi.nlm.nih.gov/pubmed/31461860
http://dx.doi.org/10.3390/ma12172741

Ejemplares similares