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Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments

Through nanoscratch experiments with a spherical diamond indenter, a contrastive study of the nanotribological properties of Ga- and N-faced gallium nitride (GaN) samples was carried out. Nanoindentation results revealed that the elastic modulus of the Ga-faced GaN sample was slightly higher than th...

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Autores principales: Guo, Jian, Qiu, Changjun, Zhu, Huiling, Wang, Yongqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747832/
https://www.ncbi.nlm.nih.gov/pubmed/31438492
http://dx.doi.org/10.3390/ma12172653
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author Guo, Jian
Qiu, Changjun
Zhu, Huiling
Wang, Yongqiang
author_facet Guo, Jian
Qiu, Changjun
Zhu, Huiling
Wang, Yongqiang
author_sort Guo, Jian
collection PubMed
description Through nanoscratch experiments with a spherical diamond indenter, a contrastive study of the nanotribological properties of Ga- and N-faced gallium nitride (GaN) samples was carried out. Nanoindentation results revealed that the elastic modulus of the Ga-faced GaN sample was slightly higher than that of N-faced GaN sample. Particularly, Ga- and N-faced GaN samples exhibited rather different nanotribological properties, and the Ga-faced sample showed a stronger wear resistance. The study indicated that the critical normal load required to cause material removal of N-faced GaN sample was almost two times that of Ga-faced GaN sample. Both Ga- and N-faces exhibited a rather low frictional coefficient at the elastic and elastoplastic stages of material, e.g., ~0.06 for Ga-face and ~0.075 for N-face when scratching under the progressive normal load. Combined with transmission electron microscopy and X-ray photoelectron spectroscopy, we speculated that, except for the intrinsic atomic arrangements attributed to the non-reverse crystallographic symmetry of c-plane wurtzite GaN, the difference of nanotribological properties between Ga- and N-faces may also be related to the preferential formation of a native oxide layer and a slight lattice damage layer on the N-faced GaN surface. This study can enrich the understanding of the nanotribological properties of Ga- and N-polar-faced bulk monocrystalline GaN materials fabricated by the conventional technique.
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spelling pubmed-67478322019-09-27 Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments Guo, Jian Qiu, Changjun Zhu, Huiling Wang, Yongqiang Materials (Basel) Article Through nanoscratch experiments with a spherical diamond indenter, a contrastive study of the nanotribological properties of Ga- and N-faced gallium nitride (GaN) samples was carried out. Nanoindentation results revealed that the elastic modulus of the Ga-faced GaN sample was slightly higher than that of N-faced GaN sample. Particularly, Ga- and N-faced GaN samples exhibited rather different nanotribological properties, and the Ga-faced sample showed a stronger wear resistance. The study indicated that the critical normal load required to cause material removal of N-faced GaN sample was almost two times that of Ga-faced GaN sample. Both Ga- and N-faces exhibited a rather low frictional coefficient at the elastic and elastoplastic stages of material, e.g., ~0.06 for Ga-face and ~0.075 for N-face when scratching under the progressive normal load. Combined with transmission electron microscopy and X-ray photoelectron spectroscopy, we speculated that, except for the intrinsic atomic arrangements attributed to the non-reverse crystallographic symmetry of c-plane wurtzite GaN, the difference of nanotribological properties between Ga- and N-faces may also be related to the preferential formation of a native oxide layer and a slight lattice damage layer on the N-faced GaN surface. This study can enrich the understanding of the nanotribological properties of Ga- and N-polar-faced bulk monocrystalline GaN materials fabricated by the conventional technique. MDPI 2019-08-21 /pmc/articles/PMC6747832/ /pubmed/31438492 http://dx.doi.org/10.3390/ma12172653 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Guo, Jian
Qiu, Changjun
Zhu, Huiling
Wang, Yongqiang
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title_full Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title_fullStr Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title_full_unstemmed Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title_short Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
title_sort nanotribological properties of ga- and n-faced bulk gallium nitride surfaces determined by nanoscratch experiments
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747832/
https://www.ncbi.nlm.nih.gov/pubmed/31438492
http://dx.doi.org/10.3390/ma12172653
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