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Highly Efficient and Stable Hydrogen Production in All pH Range by Two-Dimensional Structured Metal-Doped Tungsten Semicarbides
Transition-metal-doped tungsten semicarbide nanosheets (M-doped W(2)C NSs, M=Fe, Co, and Ni) have been synthesized through carburization of the mixture of tungsten trioxide, polyvinylpyrrolidone, and metal dopant. The nanosheets grow directly on the W mesh and have the lateral dimension of several h...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
AAAS
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6750117/ https://www.ncbi.nlm.nih.gov/pubmed/31549061 http://dx.doi.org/10.34133/2019/4029516 |
Sumario: | Transition-metal-doped tungsten semicarbide nanosheets (M-doped W(2)C NSs, M=Fe, Co, and Ni) have been synthesized through carburization of the mixture of tungsten trioxide, polyvinylpyrrolidone, and metal dopant. The nanosheets grow directly on the W mesh and have the lateral dimension of several hundreds of nm to a few μm with a thickness of few tens nm. It is demonstrated that the M-doped W(2)C NSs exhibit superior electrocatalytic activity for hydrogen evolution reaction (HER). Impressively, the Ni-doped W(2)C NSs (2 at% Ni) with the optimized HER activity show extremely low onset overpotentials of 4, 9, and 19 mV and modest Tafel slopes of 39, 51, and 87 mV dec(−1) in acidic (pH=0), neutral (pH=7.2), and basic (pH=14) solutions, respectively, which is close to the commercial Pt/C catalyst. Density functional theory (DFT) calculations also demonstrate that the Gibbs free energy for H adsorption of Ni-W(2)C is much closer to the optimal value ∆G(H⁎) = -0.073 eV as compared to -0.16 eV of W(2)C. Furthermore, nearly 100% Faradaic efficiency and long-term stability are obtained in those environments. This realization of highly tolerant metal semicarbide catalyst performing on par with commercial Pt/C in all range of pH offers a key step towards industrially electrochemical water splitting. |
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