Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe(2) Heterostructure

[Image: see text] Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus–tin diselenide (BP–SnSe(2)) heterostructure. This combination of 2D semic...

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Detalles Bibliográficos
Autores principales: Na, Junhong, Kim, Youngwook, Smet, Jurgen H., Burghard, Marko, Kern, Klaus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6750638/
https://www.ncbi.nlm.nih.gov/pubmed/31145585
http://dx.doi.org/10.1021/acsami.9b02589

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6750638/
https://www.ncbi.nlm.nih.gov/pubmed/31145585
http://dx.doi.org/10.1021/acsami.9b02589

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