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Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe(2) Heterostructure
[Image: see text] Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus–tin diselenide (BP–SnSe(2)) heterostructure. This combination of 2D semic...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6750638/ https://www.ncbi.nlm.nih.gov/pubmed/31145585 http://dx.doi.org/10.1021/acsami.9b02589 |