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Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces
Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photo...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6753060/ https://www.ncbi.nlm.nih.gov/pubmed/31537835 http://dx.doi.org/10.1038/s41598-019-49908-1 |
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author | Abbas, Yawar Rezk, Ayman Saadat, Irfan Nayfeh, Ammar Rezeq, Moh’d |
author_facet | Abbas, Yawar Rezk, Ayman Saadat, Irfan Nayfeh, Ammar Rezeq, Moh’d |
author_sort | Abbas, Yawar |
collection | PubMed |
description | Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photodetection capability of nano-Schottky junctions using gold (Au) coated conductive atomic force microscope (C-AFM) tips, and highly cleaned n-Si substrate interface. The Au nanotip/n-Si interface forms the proposed structure of a nano Schottky diode based photodetector. The electrical characteristics measured at the nanoscale junction with different Au nanotip radii show that the tunneling current increases with decreasing the tip radius. Moreover, the tunneling process and photodetection effects are discussed in terms of barrier width/height decrease at the tip-semiconductor interface due to the applied electric field as well as the generation of plasmon-induced hot-electron at the nanoparticle (i.e. C-AFM tip)/n-Si interface. Furthermore, the photodetection sensitivity is investigated and it is found to be higher for C-AFM tips with smaller radii. Moreover, this research will open a new path for the miniaturization of photodetectors with high sensitivity based on nano-Schottky interfaces. |
format | Online Article Text |
id | pubmed-6753060 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-67530602019-10-01 Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces Abbas, Yawar Rezk, Ayman Saadat, Irfan Nayfeh, Ammar Rezeq, Moh’d Sci Rep Article Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photodetection capability of nano-Schottky junctions using gold (Au) coated conductive atomic force microscope (C-AFM) tips, and highly cleaned n-Si substrate interface. The Au nanotip/n-Si interface forms the proposed structure of a nano Schottky diode based photodetector. The electrical characteristics measured at the nanoscale junction with different Au nanotip radii show that the tunneling current increases with decreasing the tip radius. Moreover, the tunneling process and photodetection effects are discussed in terms of barrier width/height decrease at the tip-semiconductor interface due to the applied electric field as well as the generation of plasmon-induced hot-electron at the nanoparticle (i.e. C-AFM tip)/n-Si interface. Furthermore, the photodetection sensitivity is investigated and it is found to be higher for C-AFM tips with smaller radii. Moreover, this research will open a new path for the miniaturization of photodetectors with high sensitivity based on nano-Schottky interfaces. Nature Publishing Group UK 2019-09-19 /pmc/articles/PMC6753060/ /pubmed/31537835 http://dx.doi.org/10.1038/s41598-019-49908-1 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Abbas, Yawar Rezk, Ayman Saadat, Irfan Nayfeh, Ammar Rezeq, Moh’d Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title | Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title_full | Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title_fullStr | Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title_full_unstemmed | Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title_short | Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces |
title_sort | photodetection characteristics of gold coated afm tips and n-silicon substrate nano-schottky interfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6753060/ https://www.ncbi.nlm.nih.gov/pubmed/31537835 http://dx.doi.org/10.1038/s41598-019-49908-1 |
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