High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-...

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Detalles Bibliográficos
Autores principales: Baek, Seung-Hye, Lee, Hyun-Jin, Lee, Sung-Nam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754497/
https://www.ncbi.nlm.nih.gov/pubmed/31541127
http://dx.doi.org/10.1038/s41598-019-49727-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754497/
https://www.ncbi.nlm.nih.gov/pubmed/31541127
http://dx.doi.org/10.1038/s41598-019-49727-4

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