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Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup
[Image: see text] The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen–boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system b...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761688/ https://www.ncbi.nlm.nih.gov/pubmed/31572849 http://dx.doi.org/10.1021/acsomega.9b01753 |
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author | Wei, Yi Ou, Haiyan |
author_facet | Wei, Yi Ou, Haiyan |
author_sort | Wei, Yi |
collection | PubMed |
description | [Image: see text] The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen–boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination. |
format | Online Article Text |
id | pubmed-6761688 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-67616882019-09-30 Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup Wei, Yi Ou, Haiyan ACS Omega [Image: see text] The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen–boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination. American Chemical Society 2019-09-11 /pmc/articles/PMC6761688/ /pubmed/31572849 http://dx.doi.org/10.1021/acsomega.9b01753 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Wei, Yi Ou, Haiyan Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup |
title | Photoluminescence Quantum Yield of Fluorescent Silicon
Carbide Determined by an Integrating Sphere Setup |
title_full | Photoluminescence Quantum Yield of Fluorescent Silicon
Carbide Determined by an Integrating Sphere Setup |
title_fullStr | Photoluminescence Quantum Yield of Fluorescent Silicon
Carbide Determined by an Integrating Sphere Setup |
title_full_unstemmed | Photoluminescence Quantum Yield of Fluorescent Silicon
Carbide Determined by an Integrating Sphere Setup |
title_short | Photoluminescence Quantum Yield of Fluorescent Silicon
Carbide Determined by an Integrating Sphere Setup |
title_sort | photoluminescence quantum yield of fluorescent silicon
carbide determined by an integrating sphere setup |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761688/ https://www.ncbi.nlm.nih.gov/pubmed/31572849 http://dx.doi.org/10.1021/acsomega.9b01753 |
work_keys_str_mv | AT weiyi photoluminescencequantumyieldoffluorescentsiliconcarbidedeterminedbyanintegratingspheresetup AT ouhaiyan photoluminescencequantumyieldoffluorescentsiliconcarbidedeterminedbyanintegratingspheresetup |