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First principles modeling of pure black phosphorus devices under pressure

Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as a low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, and explored their pressure-dependent conductance in detail by using first principle...

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Autores principales: Rong, Ximing, Yu, Zhizhou, Wu, Zewen, Li, Junjun, Wang, Bin, Wang, Yin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6774076/
https://www.ncbi.nlm.nih.gov/pubmed/31598461
http://dx.doi.org/10.3762/bjnano.10.190
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author Rong, Ximing
Yu, Zhizhou
Wu, Zewen
Li, Junjun
Wang, Bin
Wang, Yin
author_facet Rong, Ximing
Yu, Zhizhou
Wu, Zewen
Li, Junjun
Wang, Bin
Wang, Yin
author_sort Rong, Ximing
collection PubMed
description Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as a low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, and explored their pressure-dependent conductance in detail by using first principles calculations. The zigzag BP devices and the armchair BP devices exhibit different conductance–pressure relationships. For the zigzag BP devices conductance is robust against stress when the out-of-plane pressure ratio is less than 15%, and then increases rapidly until the conductive channels are fully opened. For the armchair pure BP devices conductance decreases at first by six orders of magnitude under increasing pressure and then increases quickly with further increase of pressure until the devices enter the on-state. This shows that the pure zigzag BP devices are more suitable for the application as flexible electronic devices with almost constant conductance under small pressure, while armchair BP devices can serve as bidirectional pressure sensors. Real-space distributions of band alignments were explored to understand the different pressure-related properties. We fitted a set of parameters based on the results from the empirical Wentzel–Kramers–Brillouin method, which provides an effortless approximation to quantitatively predict the pressure-related behaviors of large pure BP devices.
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spelling pubmed-67740762019-10-09 First principles modeling of pure black phosphorus devices under pressure Rong, Ximing Yu, Zhizhou Wu, Zewen Li, Junjun Wang, Bin Wang, Yin Beilstein J Nanotechnol Full Research Paper Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as a low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, and explored their pressure-dependent conductance in detail by using first principles calculations. The zigzag BP devices and the armchair BP devices exhibit different conductance–pressure relationships. For the zigzag BP devices conductance is robust against stress when the out-of-plane pressure ratio is less than 15%, and then increases rapidly until the conductive channels are fully opened. For the armchair pure BP devices conductance decreases at first by six orders of magnitude under increasing pressure and then increases quickly with further increase of pressure until the devices enter the on-state. This shows that the pure zigzag BP devices are more suitable for the application as flexible electronic devices with almost constant conductance under small pressure, while armchair BP devices can serve as bidirectional pressure sensors. Real-space distributions of band alignments were explored to understand the different pressure-related properties. We fitted a set of parameters based on the results from the empirical Wentzel–Kramers–Brillouin method, which provides an effortless approximation to quantitatively predict the pressure-related behaviors of large pure BP devices. Beilstein-Institut 2019-09-24 /pmc/articles/PMC6774076/ /pubmed/31598461 http://dx.doi.org/10.3762/bjnano.10.190 Text en Copyright © 2019, Rong et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Rong, Ximing
Yu, Zhizhou
Wu, Zewen
Li, Junjun
Wang, Bin
Wang, Yin
First principles modeling of pure black phosphorus devices under pressure
title First principles modeling of pure black phosphorus devices under pressure
title_full First principles modeling of pure black phosphorus devices under pressure
title_fullStr First principles modeling of pure black phosphorus devices under pressure
title_full_unstemmed First principles modeling of pure black phosphorus devices under pressure
title_short First principles modeling of pure black phosphorus devices under pressure
title_sort first principles modeling of pure black phosphorus devices under pressure
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6774076/
https://www.ncbi.nlm.nih.gov/pubmed/31598461
http://dx.doi.org/10.3762/bjnano.10.190
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