High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity...

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Detalles Bibliográficos
Autores principales: Xiao, Yan, Liu, Lin, Ma, Zhi-Hao, Meng, Bo, Qin, Su-Jie, Pan, Ge-Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780170/
https://www.ncbi.nlm.nih.gov/pubmed/31454935
http://dx.doi.org/10.3390/nano9091198

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780170/
https://www.ncbi.nlm.nih.gov/pubmed/31454935
http://dx.doi.org/10.3390/nano9091198

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