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High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction
Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780170/ https://www.ncbi.nlm.nih.gov/pubmed/31454935 http://dx.doi.org/10.3390/nano9091198 |