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Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser

In this study, a double-end pumped high-power passively mode-locked erbium-doped fiber laser (EDFL) was realized by employing a few-layered In(2)Se(3) flakes as a saturable absorber (SA). Herein, the uniform large-scale In(2)Se(3) flakes were synthesized by the physical vapor deposition (PVD) method...

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Autores principales: Han, Xile, Zhang, Huanian, Jiang, Shouzhen, Zhang, Chao, Li, Dengwang, Guo, Quanxin, Gao, Jinjuan, Man, Baoyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780265/
https://www.ncbi.nlm.nih.gov/pubmed/31466375
http://dx.doi.org/10.3390/nano9091216
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author Han, Xile
Zhang, Huanian
Jiang, Shouzhen
Zhang, Chao
Li, Dengwang
Guo, Quanxin
Gao, Jinjuan
Man, Baoyuan
author_facet Han, Xile
Zhang, Huanian
Jiang, Shouzhen
Zhang, Chao
Li, Dengwang
Guo, Quanxin
Gao, Jinjuan
Man, Baoyuan
author_sort Han, Xile
collection PubMed
description In this study, a double-end pumped high-power passively mode-locked erbium-doped fiber laser (EDFL) was realized by employing a few-layered In(2)Se(3) flakes as a saturable absorber (SA). Herein, the uniform large-scale In(2)Se(3) flakes were synthesized by the physical vapor deposition (PVD) method. The PVD-In(2)Se(3) SA exhibited a remarkable damage threshold of higher than 24 mJ/cm(2). Meanwhile, the PVD-In(2)Se(3) SA had a modulation depth and saturable intensity of 18.75% and 6.8 MW/cm(2), respectively. Based on the In(2)Se(3) SA, the stable bright pulses emitting at 1559.4 nm with an average output power/pulse energy/pulse duration of 122.4 mW/5.8 nJ/14.4 ns were obtained successfully. To our knowledge, 122.4 mW was the new major breakthrough of mode-locked Er-doped fiber lasers. In addition, this is the first demonstration of the dark-bright pulse pair generation based on In(2)Se(3) SA. The maximum average output power of the dark-bright pulse reached 121.2 mW, which also showed significant enhancement in comparison with previous works. Our excellent experiment results fully prove the superiority of our experimental design scheme and indicate that the PVD-In(2)Se(3) could operate as a promising highly-nonlinear photonic material for a high-power fiber laser.
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spelling pubmed-67802652019-10-30 Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser Han, Xile Zhang, Huanian Jiang, Shouzhen Zhang, Chao Li, Dengwang Guo, Quanxin Gao, Jinjuan Man, Baoyuan Nanomaterials (Basel) Article In this study, a double-end pumped high-power passively mode-locked erbium-doped fiber laser (EDFL) was realized by employing a few-layered In(2)Se(3) flakes as a saturable absorber (SA). Herein, the uniform large-scale In(2)Se(3) flakes were synthesized by the physical vapor deposition (PVD) method. The PVD-In(2)Se(3) SA exhibited a remarkable damage threshold of higher than 24 mJ/cm(2). Meanwhile, the PVD-In(2)Se(3) SA had a modulation depth and saturable intensity of 18.75% and 6.8 MW/cm(2), respectively. Based on the In(2)Se(3) SA, the stable bright pulses emitting at 1559.4 nm with an average output power/pulse energy/pulse duration of 122.4 mW/5.8 nJ/14.4 ns were obtained successfully. To our knowledge, 122.4 mW was the new major breakthrough of mode-locked Er-doped fiber lasers. In addition, this is the first demonstration of the dark-bright pulse pair generation based on In(2)Se(3) SA. The maximum average output power of the dark-bright pulse reached 121.2 mW, which also showed significant enhancement in comparison with previous works. Our excellent experiment results fully prove the superiority of our experimental design scheme and indicate that the PVD-In(2)Se(3) could operate as a promising highly-nonlinear photonic material for a high-power fiber laser. MDPI 2019-08-28 /pmc/articles/PMC6780265/ /pubmed/31466375 http://dx.doi.org/10.3390/nano9091216 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Han, Xile
Zhang, Huanian
Jiang, Shouzhen
Zhang, Chao
Li, Dengwang
Guo, Quanxin
Gao, Jinjuan
Man, Baoyuan
Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title_full Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title_fullStr Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title_full_unstemmed Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title_short Improved Laser Damage Threshold of In(2)Se(3) Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
title_sort improved laser damage threshold of in(2)se(3) saturable absorber by pvd for high-power mode-locked er-doped fiber laser
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780265/
https://www.ncbi.nlm.nih.gov/pubmed/31466375
http://dx.doi.org/10.3390/nano9091216
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