Cargando…
A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer
In this paper, we report a novel aluminum nitride (AlN) thin-film piezoelectric resonant accelerometer. Different from the ordinary MEMS (micro-electro-mechanical systems) resonant accelerometers, the entire structure of the accelerometer, including the mass and the springs, is excited to resonate i...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780656/ https://www.ncbi.nlm.nih.gov/pubmed/31489954 http://dx.doi.org/10.3390/mi10090589 |
_version_ | 1783457190330236928 |
---|---|
author | Yang, Jian Zhang, Meng He, Yurong Su, Yan Han, Guowei Si, Chaowei Ning, Jin Yang, Fuhua Wang, Xiaodong |
author_facet | Yang, Jian Zhang, Meng He, Yurong Su, Yan Han, Guowei Si, Chaowei Ning, Jin Yang, Fuhua Wang, Xiaodong |
author_sort | Yang, Jian |
collection | PubMed |
description | In this paper, we report a novel aluminum nitride (AlN) thin-film piezoelectric resonant accelerometer. Different from the ordinary MEMS (micro-electro-mechanical systems) resonant accelerometers, the entire structure of the accelerometer, including the mass and the springs, is excited to resonate in-plane, and the resonance frequency is sensitive to the out-plane acceleration. The structure is centrosymmetrical with serpentine electrodes laid on supporting beams for driving and sensing. The stiffness of the supporting beams changes when an out-plane inertial force is applied on the structure. Therefore, the resonance frequency of the accelerometer will also change under the inertial force. The working principle is analyzed and the properties are simulated in the paper. The proposed AlN accelerometer is fabricated by the MEMS technology, and the structure is released by an ICP isotropic etching. The resonance frequency is 24.66 kHz at a static state. The quality factor is 1868. The relative sensitivity of this accelerometer, defined as the shift in the resonance frequency per gravity unit (1 g = 9.8 m/s(2)) is 346 ppm/g. The linearity of the accelerometer is 0.9988. The temperature coefficient of frequency (TCF) of this accelerometer is −2.628 Hz/°C (i.e., −106 ppm/°C), tested from −40 °C to 85 °C. |
format | Online Article Text |
id | pubmed-6780656 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-67806562019-10-30 A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer Yang, Jian Zhang, Meng He, Yurong Su, Yan Han, Guowei Si, Chaowei Ning, Jin Yang, Fuhua Wang, Xiaodong Micromachines (Basel) Article In this paper, we report a novel aluminum nitride (AlN) thin-film piezoelectric resonant accelerometer. Different from the ordinary MEMS (micro-electro-mechanical systems) resonant accelerometers, the entire structure of the accelerometer, including the mass and the springs, is excited to resonate in-plane, and the resonance frequency is sensitive to the out-plane acceleration. The structure is centrosymmetrical with serpentine electrodes laid on supporting beams for driving and sensing. The stiffness of the supporting beams changes when an out-plane inertial force is applied on the structure. Therefore, the resonance frequency of the accelerometer will also change under the inertial force. The working principle is analyzed and the properties are simulated in the paper. The proposed AlN accelerometer is fabricated by the MEMS technology, and the structure is released by an ICP isotropic etching. The resonance frequency is 24.66 kHz at a static state. The quality factor is 1868. The relative sensitivity of this accelerometer, defined as the shift in the resonance frequency per gravity unit (1 g = 9.8 m/s(2)) is 346 ppm/g. The linearity of the accelerometer is 0.9988. The temperature coefficient of frequency (TCF) of this accelerometer is −2.628 Hz/°C (i.e., −106 ppm/°C), tested from −40 °C to 85 °C. MDPI 2019-09-06 /pmc/articles/PMC6780656/ /pubmed/31489954 http://dx.doi.org/10.3390/mi10090589 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yang, Jian Zhang, Meng He, Yurong Su, Yan Han, Guowei Si, Chaowei Ning, Jin Yang, Fuhua Wang, Xiaodong A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title | A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title_full | A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title_fullStr | A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title_full_unstemmed | A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title_short | A Resonant Z-Axis Aluminum Nitride Thin-Film Piezoelectric MEMS Accelerometer |
title_sort | resonant z-axis aluminum nitride thin-film piezoelectric mems accelerometer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780656/ https://www.ncbi.nlm.nih.gov/pubmed/31489954 http://dx.doi.org/10.3390/mi10090589 |
work_keys_str_mv | AT yangjian aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT zhangmeng aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT heyurong aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT suyan aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT hanguowei aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT sichaowei aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT ningjin aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT yangfuhua aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT wangxiaodong aresonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT yangjian resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT zhangmeng resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT heyurong resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT suyan resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT hanguowei resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT sichaowei resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT ningjin resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT yangfuhua resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer AT wangxiaodong resonantzaxisaluminumnitridethinfilmpiezoelectricmemsaccelerometer |