A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO(2) high-k dielectric extend above source and drain, the integrated density can be well improved...

Descripción completa

Detalles Bibliográficos
Autores principales: Gan, Lu-Rong, Wang, Ya-Rong, Chen, Lin, Zhu, Hao, Sun, Qing-Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780788/
https://www.ncbi.nlm.nih.gov/pubmed/31450802
http://dx.doi.org/10.3390/mi10090558
_version_ 1783457221043027968
author Gan, Lu-Rong
Wang, Ya-Rong
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
author_facet Gan, Lu-Rong
Wang, Ya-Rong
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
author_sort Gan, Lu-Rong
collection PubMed
description We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO(2) high-k dielectric extend above source and drain, the integrated density can be well improved, while the erasing and programming speed of the device are respectively decreased to 75 ns and 50 ns. In addition, comprehensive synaptic abilities including long-term potentiation (LTP) and long-term depression (LTD) are demonstrated in our U-shape recessed channel FG memory, highly resembling the biological synapses. These simulation results show that our device has the potential to be well used as embedded memory in neuromorphic computing and MCU (Micro Controller Unit) applications.
format Online
Article
Text
id pubmed-6780788
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-67807882019-10-30 A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications Gan, Lu-Rong Wang, Ya-Rong Chen, Lin Zhu, Hao Sun, Qing-Qing Micromachines (Basel) Article We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO(2) high-k dielectric extend above source and drain, the integrated density can be well improved, while the erasing and programming speed of the device are respectively decreased to 75 ns and 50 ns. In addition, comprehensive synaptic abilities including long-term potentiation (LTP) and long-term depression (LTD) are demonstrated in our U-shape recessed channel FG memory, highly resembling the biological synapses. These simulation results show that our device has the potential to be well used as embedded memory in neuromorphic computing and MCU (Micro Controller Unit) applications. MDPI 2019-08-23 /pmc/articles/PMC6780788/ /pubmed/31450802 http://dx.doi.org/10.3390/mi10090558 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Gan, Lu-Rong
Wang, Ya-Rong
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title_full A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title_fullStr A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title_full_unstemmed A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title_short A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
title_sort floating gate memory with u-shape recessed channel for neuromorphic computing and mcu applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780788/
https://www.ncbi.nlm.nih.gov/pubmed/31450802
http://dx.doi.org/10.3390/mi10090558
work_keys_str_mv AT ganlurong afloatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT wangyarong afloatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT chenlin afloatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT zhuhao afloatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT sunqingqing afloatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT ganlurong floatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT wangyarong floatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT chenlin floatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT zhuhao floatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications
AT sunqingqing floatinggatememorywithushaperecessedchannelforneuromorphiccomputingandmcuapplications

Ejemplares similares