A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO(2) high-k dielectric extend above source and drain, the integrated density can be well improved...

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Detalles Bibliográficos
Autores principales: Gan, Lu-Rong, Wang, Ya-Rong, Chen, Lin, Zhu, Hao, Sun, Qing-Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780788/
https://www.ncbi.nlm.nih.gov/pubmed/31450802
http://dx.doi.org/10.3390/mi10090558

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780788/
https://www.ncbi.nlm.nih.gov/pubmed/31450802
http://dx.doi.org/10.3390/mi10090558

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