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A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO(2) high-k dielectric extend above source and drain, the integrated density can be well improved...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780788/ https://www.ncbi.nlm.nih.gov/pubmed/31450802 http://dx.doi.org/10.3390/mi10090558 |