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Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized [Form...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781031/ https://www.ncbi.nlm.nih.gov/pubmed/31546886 http://dx.doi.org/10.3390/nano9091342 |
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author | Chen, Zongbin Li, Tingzhou Yang, Tie Xu, Heju Khenata, Rabah Gao, Yongchun Wang, Xiaotian |
author_facet | Chen, Zongbin Li, Tingzhou Yang, Tie Xu, Heju Khenata, Rabah Gao, Yongchun Wang, Xiaotian |
author_sort | Chen, Zongbin |
collection | PubMed |
description | Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized [Formula: see text]-type bulk PdF(3) compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF(3)/Ga(2)O(3)/PdF(3) magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 10(7)). |
format | Online Article Text |
id | pubmed-6781031 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-67810312019-10-30 Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance Chen, Zongbin Li, Tingzhou Yang, Tie Xu, Heju Khenata, Rabah Gao, Yongchun Wang, Xiaotian Nanomaterials (Basel) Letter Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized [Formula: see text]-type bulk PdF(3) compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF(3)/Ga(2)O(3)/PdF(3) magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 10(7)). MDPI 2019-09-19 /pmc/articles/PMC6781031/ /pubmed/31546886 http://dx.doi.org/10.3390/nano9091342 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Letter Chen, Zongbin Li, Tingzhou Yang, Tie Xu, Heju Khenata, Rabah Gao, Yongchun Wang, Xiaotian Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title | Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title_full | Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title_fullStr | Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title_full_unstemmed | Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title_short | Palladium (III) Fluoride Bulk and PdF(3)/Ga(2)O(3)/PdF(3) Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance |
title_sort | palladium (iii) fluoride bulk and pdf(3)/ga(2)o(3)/pdf(3) magnetic tunnel junction: multiple spin-gapless semiconducting, perfect spin filtering, and high tunnel magnetoresistance |
topic | Letter |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781031/ https://www.ncbi.nlm.nih.gov/pubmed/31546886 http://dx.doi.org/10.3390/nano9091342 |
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