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Dynamics Contributions to the Growth Mechanism of Ga(2)O(3) Thin Film and NWs Enabled by Ag Catalyst
In the last few years, interest in the use of gallium oxide (Ga(2)O(3)) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga(2)O(3) has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781042/ https://www.ncbi.nlm.nih.gov/pubmed/31500158 http://dx.doi.org/10.3390/nano9091272 |