Cargando…

Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell

Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam ep...

Descripción completa

Detalles Bibliográficos
Autores principales: Greenberg, Ya’akov, Kelrich, Alexander, Cohen, Shimon, Kar-Narayan, Sohini, Ritter, Dan, Calahorra, Yonatan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781057/
https://www.ncbi.nlm.nih.gov/pubmed/31527424
http://dx.doi.org/10.3390/nano9091327
_version_ 1783457289540206592
author Greenberg, Ya’akov
Kelrich, Alexander
Cohen, Shimon
Kar-Narayan, Sohini
Ritter, Dan
Calahorra, Yonatan
author_facet Greenberg, Ya’akov
Kelrich, Alexander
Cohen, Shimon
Kar-Narayan, Sohini
Ritter, Dan
Calahorra, Yonatan
author_sort Greenberg, Ya’akov
collection PubMed
description Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth.
format Online
Article
Text
id pubmed-6781057
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-67810572019-10-30 Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell Greenberg, Ya’akov Kelrich, Alexander Cohen, Shimon Kar-Narayan, Sohini Ritter, Dan Calahorra, Yonatan Nanomaterials (Basel) Article Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth. MDPI 2019-09-16 /pmc/articles/PMC6781057/ /pubmed/31527424 http://dx.doi.org/10.3390/nano9091327 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Greenberg, Ya’akov
Kelrich, Alexander
Cohen, Shimon
Kar-Narayan, Sohini
Ritter, Dan
Calahorra, Yonatan
Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title_full Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title_fullStr Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title_full_unstemmed Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title_short Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
title_sort strain-mediated bending of inp nanowires through the growth of an asymmetric inas shell
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781057/
https://www.ncbi.nlm.nih.gov/pubmed/31527424
http://dx.doi.org/10.3390/nano9091327
work_keys_str_mv AT greenbergyaakov strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell
AT kelrichalexander strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell
AT cohenshimon strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell
AT karnarayansohini strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell
AT ritterdan strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell
AT calahorrayonatan strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell