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Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell
Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam ep...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781057/ https://www.ncbi.nlm.nih.gov/pubmed/31527424 http://dx.doi.org/10.3390/nano9091327 |
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author | Greenberg, Ya’akov Kelrich, Alexander Cohen, Shimon Kar-Narayan, Sohini Ritter, Dan Calahorra, Yonatan |
author_facet | Greenberg, Ya’akov Kelrich, Alexander Cohen, Shimon Kar-Narayan, Sohini Ritter, Dan Calahorra, Yonatan |
author_sort | Greenberg, Ya’akov |
collection | PubMed |
description | Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth. |
format | Online Article Text |
id | pubmed-6781057 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-67810572019-10-30 Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell Greenberg, Ya’akov Kelrich, Alexander Cohen, Shimon Kar-Narayan, Sohini Ritter, Dan Calahorra, Yonatan Nanomaterials (Basel) Article Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth. MDPI 2019-09-16 /pmc/articles/PMC6781057/ /pubmed/31527424 http://dx.doi.org/10.3390/nano9091327 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Greenberg, Ya’akov Kelrich, Alexander Cohen, Shimon Kar-Narayan, Sohini Ritter, Dan Calahorra, Yonatan Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title | Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title_full | Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title_fullStr | Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title_full_unstemmed | Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title_short | Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell |
title_sort | strain-mediated bending of inp nanowires through the growth of an asymmetric inas shell |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781057/ https://www.ncbi.nlm.nih.gov/pubmed/31527424 http://dx.doi.org/10.3390/nano9091327 |
work_keys_str_mv | AT greenbergyaakov strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell AT kelrichalexander strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell AT cohenshimon strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell AT karnarayansohini strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell AT ritterdan strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell AT calahorrayonatan strainmediatedbendingofinpnanowiresthroughthegrowthofanasymmetricinasshell |