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Low value for the static background dielectric constant in epitaxial PZT thin films
Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6789001/ https://www.ncbi.nlm.nih.gov/pubmed/31605006 http://dx.doi.org/10.1038/s41598-019-51312-8 |
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author | Boni, Georgia Andra Chirila, Cristina Florentina Hrib, Luminita Negrea, Raluca Filip, Lucian Dragos Pintilie, Ioana Pintilie, Lucian |
author_facet | Boni, Georgia Andra Chirila, Cristina Florentina Hrib, Luminita Negrea, Raluca Filip, Lucian Dragos Pintilie, Ioana Pintilie, Lucian |
author_sort | Boni, Georgia Andra |
collection | PubMed |
description | Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it is shown that the value of the static dielectric constant at zero electric field and with negligible contribution from the ferroelectric polarization (also called static background dielectric constant, or just background dielectric constant) can be very low (between 10 and 15), possibly converging towards the value in the optical domain. It is also found that the natural state of an ideal, mono-domain, epitaxial ferroelectric is that of full depletion with constant capacitance at voltages outside the switching domain. The findings are based on experimental results obtained from a new custom method designed to measure the capacitance-voltage characteristic in static conditions, as well from Rayleigh analysis. These results have important implications in future analysis of conduction mechanisms in ferroelectrics and theoretical modeling of ferroelectric-based devices. |
format | Online Article Text |
id | pubmed-6789001 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-67890012019-10-17 Low value for the static background dielectric constant in epitaxial PZT thin films Boni, Georgia Andra Chirila, Cristina Florentina Hrib, Luminita Negrea, Raluca Filip, Lucian Dragos Pintilie, Ioana Pintilie, Lucian Sci Rep Article Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it is shown that the value of the static dielectric constant at zero electric field and with negligible contribution from the ferroelectric polarization (also called static background dielectric constant, or just background dielectric constant) can be very low (between 10 and 15), possibly converging towards the value in the optical domain. It is also found that the natural state of an ideal, mono-domain, epitaxial ferroelectric is that of full depletion with constant capacitance at voltages outside the switching domain. The findings are based on experimental results obtained from a new custom method designed to measure the capacitance-voltage characteristic in static conditions, as well from Rayleigh analysis. These results have important implications in future analysis of conduction mechanisms in ferroelectrics and theoretical modeling of ferroelectric-based devices. Nature Publishing Group UK 2019-10-11 /pmc/articles/PMC6789001/ /pubmed/31605006 http://dx.doi.org/10.1038/s41598-019-51312-8 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Boni, Georgia Andra Chirila, Cristina Florentina Hrib, Luminita Negrea, Raluca Filip, Lucian Dragos Pintilie, Ioana Pintilie, Lucian Low value for the static background dielectric constant in epitaxial PZT thin films |
title | Low value for the static background dielectric constant in epitaxial PZT thin films |
title_full | Low value for the static background dielectric constant in epitaxial PZT thin films |
title_fullStr | Low value for the static background dielectric constant in epitaxial PZT thin films |
title_full_unstemmed | Low value for the static background dielectric constant in epitaxial PZT thin films |
title_short | Low value for the static background dielectric constant in epitaxial PZT thin films |
title_sort | low value for the static background dielectric constant in epitaxial pzt thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6789001/ https://www.ncbi.nlm.nih.gov/pubmed/31605006 http://dx.doi.org/10.1038/s41598-019-51312-8 |
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