Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper l...

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Detalles Bibliográficos
Autores principales: Kurasaki, Ayata, Tanaka, Ryo, Sugisaki, Sumio, Matsuda, Tokiyoshi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru, Kimura, Mutsumi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803919/
https://www.ncbi.nlm.nih.gov/pubmed/31581707
http://dx.doi.org/10.3390/ma12193236

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803919/
https://www.ncbi.nlm.nih.gov/pubmed/31581707
http://dx.doi.org/10.3390/ma12193236

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