Cargando…
Giant non-linear susceptibility of hydrogenic donors in silicon and germanium
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption...
Autores principales: | Le, Nguyen H., Lanskii, Grigory V., Aeppli, Gabriel, Murdin, Benedict N. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6804565/ https://www.ncbi.nlm.nih.gov/pubmed/31645913 http://dx.doi.org/10.1038/s41377-019-0174-6 |
Ejemplares similares
-
Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation
por: Chick, S., et al.
Publicado: (2017) -
Germanium epitaxy on silicon
por: Ye, Hui, et al.
Publicado: (2014) -
Germanium silicon: physics and materials
por: Willardson, R K, et al.
Publicado: (1998) -
Acceptor-donor-pairs in germanium
por: Forkel-Wirth, Doris, et al.
Publicado: (1992) -
Deep donor states of muonium in silicon and germanium (status report exp SC81)
por: CERN. Geneva. Proton Synchrotron and Synchrocyclotron Committee
Publicado: (1979)