New Disposable Nitric Oxide Sensor Fabrication Using GaN Nanowires

[Image: see text] Gallium nitride (GaN) nanowires anchored on the surface of cost-effective pencil graphite electrodes (PGEs) have been developed as a new disposable nitric oxide (NO) sensor through a hydrothermal method followed by annealing treatment. The as-obtained nanomaterials were examined by field emission scanning electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and EIS. Concurrently, the electrocatalytic performance has been analyzed using cyclic voltammetry and amperometric measurements. The experimental results exhibit good electrochemical sensing performance toward the generated NO in NO(2)(–) with a wide linear detection range of 1.0 μM to 1.0 mM with a correlation coefficient of 0.999 and a detection limit of 0.180 μM. In addition, the GaN nanowire-modified PGE surface showed high selectivity for the detection of NO as compared to other relevant biomolecules. This confirms that the PGE/GaN nanowire is a new promising electrochemical sensor for the sensitive detection of NO.