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Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation
The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution transmission electron microscopy (HR-TEM) can provide valuable insight into the growth mechanism in high temperature pressure (HTP) laser ablation where the best quality of BNNT materials can be obtained s...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6821736/ https://www.ncbi.nlm.nih.gov/pubmed/31666654 http://dx.doi.org/10.1038/s41598-019-52247-w |
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author | Kim, Jun Hee Cho, Hyunjin Pham, Thang Viet Hwang, Jae Hun Ahn, Seokhoon Jang, Se Gyu Lee, Hunsu Park, Cheol Kim, Cheol Sang Kim, Myung Jong |
author_facet | Kim, Jun Hee Cho, Hyunjin Pham, Thang Viet Hwang, Jae Hun Ahn, Seokhoon Jang, Se Gyu Lee, Hunsu Park, Cheol Kim, Cheol Sang Kim, Myung Jong |
author_sort | Kim, Jun Hee |
collection | PubMed |
description | The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution transmission electron microscopy (HR-TEM) can provide valuable insight into the growth mechanism in high temperature pressure (HTP) laser ablation where the best quality of BNNT materials can be obtained so far. Two growth modes of BNNT coexisting during the synthesis process have been proposed based on HR-TEM observation and length analysis. One is the root growth mode, in which boron nitride (BN) species formed via the surface interaction between surrounding N(2) molecules and boron nanodroplets incorporate into the tubular structure. Another mode called open-end growth mode means the prolongation of tube growth from the exposed BN edge surrounding the surface of boron nanodroplets which is constructed by the heterogeneous nucleation of absorbed BN radicals from the gas plume. The statistical data, the proportions of end structures and the length of BNNTs, could be fitted to two growth modes, and the open-end growth mode is found to be especially effective in producing longer nanotubes with a higher growth rate. The scientific understanding of the growth mechanism is believed to provide the control for optimized production of BNNTs. |
format | Online Article Text |
id | pubmed-6821736 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-68217362019-11-05 Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation Kim, Jun Hee Cho, Hyunjin Pham, Thang Viet Hwang, Jae Hun Ahn, Seokhoon Jang, Se Gyu Lee, Hunsu Park, Cheol Kim, Cheol Sang Kim, Myung Jong Sci Rep Article The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution transmission electron microscopy (HR-TEM) can provide valuable insight into the growth mechanism in high temperature pressure (HTP) laser ablation where the best quality of BNNT materials can be obtained so far. Two growth modes of BNNT coexisting during the synthesis process have been proposed based on HR-TEM observation and length analysis. One is the root growth mode, in which boron nitride (BN) species formed via the surface interaction between surrounding N(2) molecules and boron nanodroplets incorporate into the tubular structure. Another mode called open-end growth mode means the prolongation of tube growth from the exposed BN edge surrounding the surface of boron nanodroplets which is constructed by the heterogeneous nucleation of absorbed BN radicals from the gas plume. The statistical data, the proportions of end structures and the length of BNNTs, could be fitted to two growth modes, and the open-end growth mode is found to be especially effective in producing longer nanotubes with a higher growth rate. The scientific understanding of the growth mechanism is believed to provide the control for optimized production of BNNTs. Nature Publishing Group UK 2019-10-30 /pmc/articles/PMC6821736/ /pubmed/31666654 http://dx.doi.org/10.1038/s41598-019-52247-w Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Kim, Jun Hee Cho, Hyunjin Pham, Thang Viet Hwang, Jae Hun Ahn, Seokhoon Jang, Se Gyu Lee, Hunsu Park, Cheol Kim, Cheol Sang Kim, Myung Jong Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title | Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title_full | Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title_fullStr | Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title_full_unstemmed | Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title_short | Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
title_sort | dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6821736/ https://www.ncbi.nlm.nih.gov/pubmed/31666654 http://dx.doi.org/10.1038/s41598-019-52247-w |
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