Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

[Image: see text] The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m(2)·K/GW, which is a large improvement on the curren...

Descripción completa

Detalles Bibliográficos
Autores principales: Mandal, Soumen, Yuan, Chao, Massabuau, Fabien, Pomeroy, James W., Cuenca, Jerome, Bland, Henry, Thomas, Evan, Wallis, David, Batten, Tim, Morgan, David, Oliver, Rachel, Kuball, Martin, Williams, Oliver A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6823629/
https://www.ncbi.nlm.nih.gov/pubmed/31603642
http://dx.doi.org/10.1021/acsami.9b13869

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6823629/
https://www.ncbi.nlm.nih.gov/pubmed/31603642
http://dx.doi.org/10.1021/acsami.9b13869

Ejemplares similares