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Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si sub...

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Autores principales: Anzalone, Ruggero, Zimbone, Massimo, Calabretta, Cristiano, Mauceri, Marco, Alberti, Alessandra, Reitano, Riccardo, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829424/
https://www.ncbi.nlm.nih.gov/pubmed/31658766
http://dx.doi.org/10.3390/ma12203293
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author Anzalone, Ruggero
Zimbone, Massimo
Calabretta, Cristiano
Mauceri, Marco
Alberti, Alessandra
Reitano, Riccardo
La Via, Francesco
author_facet Anzalone, Ruggero
Zimbone, Massimo
Calabretta, Cristiano
Mauceri, Marco
Alberti, Alessandra
Reitano, Riccardo
La Via, Francesco
author_sort Anzalone, Ruggero
collection PubMed
description In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.
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spelling pubmed-68294242019-11-18 Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers Anzalone, Ruggero Zimbone, Massimo Calabretta, Cristiano Mauceri, Marco Alberti, Alessandra Reitano, Riccardo La Via, Francesco Materials (Basel) Article In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures. MDPI 2019-10-10 /pmc/articles/PMC6829424/ /pubmed/31658766 http://dx.doi.org/10.3390/ma12203293 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Anzalone, Ruggero
Zimbone, Massimo
Calabretta, Cristiano
Mauceri, Marco
Alberti, Alessandra
Reitano, Riccardo
La Via, Francesco
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title_full Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title_fullStr Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title_full_unstemmed Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title_short Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
title_sort temperature investigation on 3c-sic homo-epitaxy on four-inch wafers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829424/
https://www.ncbi.nlm.nih.gov/pubmed/31658766
http://dx.doi.org/10.3390/ma12203293
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