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Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si sub...

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Detalles Bibliográficos
Autores principales:	Anzalone, Ruggero, Zimbone, Massimo, Calabretta, Cristiano, Mauceri, Marco, Alberti, Alessandra, Reitano, Riccardo, La Via, Francesco
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829424/ https://www.ncbi.nlm.nih.gov/pubmed/31658766 http://dx.doi.org/10.3390/ma12203293

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