3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We invest...

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Detalles Bibliográficos
Autores principales: Zimbone, Massimo, Zielinski, Marcin, Bongiorno, Corrado, Calabretta, Cristiano, Anzalone, Ruggero, Scalese, Silvia, Fisicaro, Giuseppe, La Magna, Antonino, Mancarella, Fulvio, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829442/
https://www.ncbi.nlm.nih.gov/pubmed/31635213
http://dx.doi.org/10.3390/ma12203407

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829442/
https://www.ncbi.nlm.nih.gov/pubmed/31635213
http://dx.doi.org/10.3390/ma12203407

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