Cargando…

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We invest...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zimbone, Massimo, Zielinski, Marcin, Bongiorno, Corrado, Calabretta, Cristiano, Anzalone, Ruggero, Scalese, Silvia, Fisicaro, Giuseppe, La Magna, Antonino, Mancarella, Fulvio, La Via, Francesco
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829442/ https://www.ncbi.nlm.nih.gov/pubmed/31635213 http://dx.doi.org/10.3390/ma12203407

Ejemplares similares

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
por: Anzalone, Ruggero, et al.
Publicado: (2019)

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
por: Calabretta, Cristiano, et al.
Publicado: (2022)

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis
por: Scuderi, Viviana, et al.
Publicado: (2020)

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)
por: Calabretta, Cristiano, et al.
Publicado: (2021)

New Approaches and Understandings in the Growth of Cubic Silicon Carbide
por: Via, Francesco La, et al.
Publicado: (2021)

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
por: Calabretta, Cristiano, et al.
Publicado: (2019)

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
por: Schuh, Philipp, et al.
Publicado: (2019)

Direct observation of single organic molecules grafted on the surface of a silicon nanowire
por: Puglisi, Rosaria A., et al.
Publicado: (2019)

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
por: Schuh, Philipp, et al.
Publicado: (2019)

Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
por: Scuderi, Viviana, et al.
Publicado: (2023)

Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires
por: Borgh, Giovanni, et al.
Publicado: (2022)

Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm
por: Puglisi, Rosaria A., et al.
Publicado: (2019)

Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation
por: Sanzaro, Salvatore, et al.
Publicado: (2021)

Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes
por: Camarda, Massimo, et al.
Publicado: (2014)

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon
por: Sapienza, Sergio, et al.
Publicado: (2021)

Structural Characterization and Adsorption Properties of Dunino Raw Halloysite Mineral for Dye Removal from Water
por: Filice, Simona, et al.
Publicado: (2021)

Al(2)O(3) Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
por: Schilirò, Emanuela, et al.
Publicado: (2023)

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers
por: Pirnaci, Massimo D., et al.
Publicado: (2021)

Maskless inverted pyramid texturization of silicon
por: Wang, Yan, et al.
Publicado: (2015)

Exploring the Structural Competition between the Black and the Yellow Phase of CsPbI(3)
por: Deretzis, Ioannis, et al.
Publicado: (2021)

Inverting the organisational pyramid
por: Hendee, WR
Publicado: (2007)

Study on the Physico-Chemical Properties of the Si Nanowires Surface
por: Puglisi, Rosaria A., et al.
Publicado: (2019)

Pb clustering and PbI(2) nanofragmentation during methylammonium lead iodide perovskite degradation
por: Alberti, Alessandra, et al.
Publicado: (2019)

Editorial for the Special Issue on SiC Based Miniaturized Devices
por: Saddow, Stephen E., et al.
Publicado: (2020)

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
por: Vecchio, Carmelo, et al.
Publicado: (2011)

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes
por: Zhao, Yue, et al.
Publicado: (2021)

Emerging SiC Applications beyond Power Electronic Devices
por: La Via, Francesco, et al.
Publicado: (2023)

Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications
por: Meli, Alessandro, et al.
Publicado: (2021)

X-ray Investigation of CsPbI(3):EuCl(3) Infiltrated into Gig-Lox TiO(2) Spongy Layers for Perovskite Solar Cells Applications
por: La Magna, Paola, et al.
Publicado: (2023)

Lead Detection in a Gig-Lox TiO(2) Sponge by X-ray Reflectivity
por: Arena, Valentina, et al.
Publicado: (2023)

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions
por: Pellegrino, Domenico, et al.
Publicado: (2021)

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells
por: Gao, Kun, et al.
Publicado: (2020)

αSiC - βSiC - graphene composites
por: Razmjoo, Ali, et al.
Publicado: (2023)

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
por: Frazzetto, Alessia, et al.
Publicado: (2011)

Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites
por: Li, Longbiao
Publicado: (2016)

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach
por: Masullo, Marco, et al.
Publicado: (2019)

Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications
por: Abdalgader, Ibrahim A. S., et al.
Publicado: (2022)

Design and Implementation of a SiC-Based Multifunctional Back-to-Back Three-Phase Inverter for Advanced Microgrid Operation
por: Ma, Chao-Tsung, et al.
Publicado: (2023)

Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure
por: Zhang, Chunyang, et al.
Publicado: (2018)

A Simple Method for the Fabrication of Silicon Inverted Pyramid Substrates for Surface-Enhanced Raman Spectroscopy
por: Liu, Jia, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_mqt1665p34p80rhjjhv3lge5vd