Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm(2)/Vs) and high current ON/OFF ratios (I(On)/I(Off...

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Detalles Bibliográficos
Autores principales: Avis, Christophe, Kim, YounGoo, Jang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829470/
https://www.ncbi.nlm.nih.gov/pubmed/31614961
http://dx.doi.org/10.3390/ma12203341

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829470/
https://www.ncbi.nlm.nih.gov/pubmed/31614961
http://dx.doi.org/10.3390/ma12203341

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