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High-pressure synthesis and crystal structure of SrGa(4)As(4)

Strontium tetra­gallate(II,III) tetra­arsenide, SrGa(4)As(4), was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 8 GPa and 1573 K. The com­pound crystallizes in a new structure type (P3(2)21, Z = 3) as a three-dimensional (3D) framework of corner...

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Autores principales: Weippert, Valentin, Johrendt, Dirk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829736/
https://www.ncbi.nlm.nih.gov/pubmed/31709083
http://dx.doi.org/10.1107/S2056989019013562
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author Weippert, Valentin
Johrendt, Dirk
author_facet Weippert, Valentin
Johrendt, Dirk
author_sort Weippert, Valentin
collection PubMed
description Strontium tetra­gallate(II,III) tetra­arsenide, SrGa(4)As(4), was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 8 GPa and 1573 K. The com­pound crystallizes in a new structure type (P3(2)21, Z = 3) as a three-dimensional (3D) framework of corner-sharing SrAs(8) quadratic anti­prisms with strontium situated on a twofold rotation axis (Wyckoff position 3b). This arrangement is surrounded by a 3D framework which can be described as alternately stacked layers of either condensed Ga(III)As(4) tetra­hedra or honeycomb-like layers built up from distorted ethane-like Ga(II) (2)As(6) units com­prising Ga—Ga bonds.
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spelling pubmed-68297362019-11-08 High-pressure synthesis and crystal structure of SrGa(4)As(4) Weippert, Valentin Johrendt, Dirk Acta Crystallogr E Crystallogr Commun Research Communications Strontium tetra­gallate(II,III) tetra­arsenide, SrGa(4)As(4), was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 8 GPa and 1573 K. The com­pound crystallizes in a new structure type (P3(2)21, Z = 3) as a three-dimensional (3D) framework of corner-sharing SrAs(8) quadratic anti­prisms with strontium situated on a twofold rotation axis (Wyckoff position 3b). This arrangement is surrounded by a 3D framework which can be described as alternately stacked layers of either condensed Ga(III)As(4) tetra­hedra or honeycomb-like layers built up from distorted ethane-like Ga(II) (2)As(6) units com­prising Ga—Ga bonds. International Union of Crystallography 2019-10-22 /pmc/articles/PMC6829736/ /pubmed/31709083 http://dx.doi.org/10.1107/S2056989019013562 Text en © Weippert and Johrendt 2019 http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.http://creativecommons.org/licenses/by/4.0/
spellingShingle Research Communications
Weippert, Valentin
Johrendt, Dirk
High-pressure synthesis and crystal structure of SrGa(4)As(4)
title High-pressure synthesis and crystal structure of SrGa(4)As(4)
title_full High-pressure synthesis and crystal structure of SrGa(4)As(4)
title_fullStr High-pressure synthesis and crystal structure of SrGa(4)As(4)
title_full_unstemmed High-pressure synthesis and crystal structure of SrGa(4)As(4)
title_short High-pressure synthesis and crystal structure of SrGa(4)As(4)
title_sort high-pressure synthesis and crystal structure of srga(4)as(4)
topic Research Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829736/
https://www.ncbi.nlm.nih.gov/pubmed/31709083
http://dx.doi.org/10.1107/S2056989019013562
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